M391B5273DH0-YK0 - Samsung 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Here are the technical specifications for the Samsung 4GB DDR3-1600MHz Memory Module:

1. Memory Type: DDR3 SDRAM
2. Capacity: 4GB
3. Memory Speed: 1600MHz
4. Data Integrity Check: ECC
5. CAS Latency: CL11
6. Pin Count: 240-Pin
7. Rank: Dual Rank
8. Voltage: 1.35V (Low Voltage)
9. Buffered/Unbuffered: Unbuffered
10. Error Correction Code (ECC): Yes
11. Form Factor: DIMM
12. Memory Configuration: 512M x 72

Helpful Notes:
1. This memory module is designed for use in servers and workstations that require ECC memory.
2. The low voltage of 1.35V helps reduce power consumption and heat generation.
3. Dual rank memory allows for increased memory density and improved performance.