Toshiba MK2001GRZB | 200GB SFF 2.5-inch SLC Single-level Cell Write Optimized Enterprise SAS NAND Solid State Drive

1. Capacity: 200GB
2. Form Factor: SFF 2.5-inch
3. NAND Flash Memory Type: SLC (Single-level Cell)
4. Interface: SAS (Serial Attached SCSI)
5. Data Transfer Rate: 12 Gbps
6. Endurance: 10 Drive Writes Per Day (DWPD)
7. MTBF (Mean Time Between Failures): 2 million hours
8. Power Consumption (Active): 4.5 Watts
9. Power Consumption (Idle): 1.6 Watts
10. Operating Temperature: 0°C to 70°C
11. Shock Resistance: 1000G/0.5ms
12. Vibration Resistance: 2.17G RMS (5-700Hz)

Notes:
1. SLC NAND flash memory provides higher endurance and reliability than MLC or TLC NAND.
2. SAS interface provides faster data transfer rates and better reliability than SATA interface.
3. 10 DWPD endurance rating makes it suitable for write-intensive enterprise applications.