Samsung M474B1G73BH0-YK0 | 8GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SO-DIMM 1.35V Low Voltage Dual Rank Memory Module

1. Memory Type: DDR3 SDRAM
2. Memory Size: 8 GB
3. Memory Speed: 1600 MHz
4. Memory Standard: PC3-12800
5. Error Correction Code (ECC): ECC
6. Buffered/Unbuffered: Unbuffered
7. CAS Latency: CL11
8. Pin Count: 204
9. Form Factor: SoDimm
10. Voltage: 1.35V
11. Rank: Dual Rank
12. Memory Configuration: 1 x 8 GB

Helpful Notes:
1. ECC memory is designed to detect and correct single-bit errors in data.
2. The low voltage of 1.35V helps reduce power consumption and heat generation.
3. Dual rank memory provides better performance than single rank memory in certain applications.