Samsung M474B1G73BH0YH9 | 8GB DDR3-1333MHz PC3-10600 ECC Unbuffered CL9 204-Pin SO-DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical Specifications:
- Memory Type: DDR3 SDRAM
- Capacity: 8GB
- Memory Speed: 1333MHz
- Form Factor: SODIMM 204-pin
- Error Correction Code (ECC): ECC
- CAS Latency: CL9
- Rank: Dual Rank
- Voltage: 1.35V
- Technology: Low Voltage
- Pin Configuration: 204 pins
- Data Integrity Check: Non-ECC
- Module Configuration: 1024M x 72

Helpful Notes:
- This memory module is compatible with laptops and small form factor PCs.
- ECC memory is designed to detect and correct single-bit errors, providing increased reliability.
- The low voltage technology of this module helps to reduce power consumption and heat generation.