Samsung M474B5273DH0-YK0 | 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SO-DIMM 1.35V Low Voltage Dual Rank Memory Module

1. Memory Type: DDR3 SDRAM
2. Capacity: 4GB
3. Memory Speed: 1600MHz
4. Latency Timing: CL11
5. Pin Count: 204
6. Form Factor: SoDimm
7. Voltage: 1.35V
8. Error Correction Code (ECC): Yes
9. Buffered/Unbuffered: Unbuffered
10. Rank: Dual Rank
11. CAS Latency: 11
12. Memory Configuration: 512M x 8

Notes:
1. ECC technology ensures data integrity and improves system stability.
2. Low voltage technology reduces power consumption and heat generation.
3. Dual rank memory module improves system performance by allowing for more efficient memory access.