Samsung MV-3V2G3D/US | 4GB Kit (2 X 2GB) PC3-12800 DDR3-1600MHz non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Very low Profile (VLP) Memory

Technical Specifications:
- Memory Type: DDR3 SDRAM
- Memory Size: 4 GB (2 x 2 GB)
- Memory Speed: 1600 MHz
- Latency Timings: CL11
- Pin Count: 240-pin
- Voltage: 1.35V
- Form Factor: DIMM
- Error Correction Code: Non-ECC
- Buffered/Unbuffered: Unbuffered
- Profile: Very Low Profile (VLP)
- Technology: Low Voltage
- CAS Latency: 11

Helpful Notes:
- The low voltage feature helps reduce power consumption and heat generation.
- The very low profile design makes it ideal for use in small form factor systems.
- Non-ECC memory is suitable for most consumer and small business applications.