Samsung M474B1G73QH0-TK0 | 8GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SO-DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical Specifications:
- Memory Type: DDR3 SDRAM
- Capacity: 8GB
- Memory Speed: 1600 MHz
- Form Factor: 204-pin SO-DIMM
- CAS Latency: CL11
- Error Correction Code (ECC): ECC
- Unbuffered: Yes
- Rank: Dual Rank
- Voltage: 1.35V
- Technology: Low Voltage
- Pin Configuration: 204 pins
- Data Integrity Check: Non-ECC

Helpful Notes:
1. This memory module is specifically designed for use in servers and workstations that require ECC memory.
2. The low voltage technology used in this module helps reduce power consumption and heat generation.
3. Dual rank memory modules provide better performance than single rank modules in certain applications.